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Số người truy cập: 107,061,056

 Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices
Tác giả hoặc Nhóm tác giả: Son Phuong Le, Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, and Toshi-kazu Suzuki
Nơi đăng: Journal of Applied Physics; Số: 116;Từ->đến trang: 054510;Năm: 2014
Lĩnh vực: Khoa học; Loại: Bài báo khoa học; Thể loại: Quốc tế
TÓM TẮT
We have systematically investigated low-frequency noise (LFN) in AlN/AlGaN/GaN metalinsulator-semiconductor (MIS) devices, where the AlN gate insulator layer was sputteringdeposited on the AlGaN surface, in comparison with LFN in AlGaN/GaN Schottky devices. By measuring LFN in ungated two-terminal devices and heterojunction field-effect transistors (HFETs), we extracted LFN characteristics in the intrinsic gated region of the HFETs. Although there is a bias regime of the Schottky-HFETs in which LFN is dominated by the gate leakage current, LFN in the MIS-HFETs is always dominated by only the channel current. Analyzing the
channel-current-dominated LFN, we obtained Hooge parameters a for the gated region as a function of the sheet electron concentration ns under the gate. In a regime of small ns, both the MIS- and Schottky-HFETs exhibit α ∝ 1/ns. On the other hand, in a middle ns regime of the MIS-HFETs, α decreases rapidly like ns-ξ with ξ ~ 2-3, which is not observed for the SchottkyHFETs. In addition, we observe strong increase in α ∝ ns3 in a large ns regime for both the MIS- and Schottky-HFETs.
ABSTRACT
We have systematically investigated low-frequency noise (LFN) in AlN/AlGaN/GaN metalinsulator-semiconductor (MIS) devices, where the AlN gate insulator layer was sputteringdeposited on the AlGaN surface, in comparison with LFN in AlGaN/GaN Schottky devices. By measuring LFN in ungated two-terminal devices and heterojunction field-effect transistors (HFETs), we extracted LFN characteristics in the intrinsic gated region of the HFETs. Although there is a bias regime of the Schottky-HFETs in which LFN is dominated by the gate leakage current, LFN in the MIS-HFETs is always dominated by only the channel current. Analyzing the
channel-current-dominated LFN, we obtained Hooge parameters a for the gated region as a function of the sheet electron concentration ns under the gate. In a regime of small ns, both the MIS- and Schottky-HFETs exhibit α ∝ 1/ns. On the other hand, in a middle ns regime of the MIS-HFETs, α decreases rapidly like ns-ξ with ξ ~ 2-3, which is not observed for the SchottkyHFETs. In addition, we observe strong increase in α ∝ ns3 in a large ns regime for both the MIS- and Schottky-HFETs.
[ jap1162014.pdf ]
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