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 Effects of Insulator Dielectric Passivation Layer on the Breakdown Voltage of AlGaN/GaN High Electron Mobility Transistor
Tác giả hoặc Nhóm tác giả: Than Hong Phuc, Tran Thi Tra Vinh, Nguyen Vu Anh Quang, Than Quang Tho, Huynh Thanh Tung, Nguyen Tan Hung, Van-Trung Nguyen, Van-Phuc Hoang, Trong-Thuc Hoang, Cong-Kha Pham
Nơi đăng: The 10th IWAMSN; Số: 1;Từ->đến trang: 1;Năm: 2021
Lĩnh vực: Kỹ thuật; Loại: Bài báo khoa học; Thể loại: Quốc tế
TÓM TẮT
Although AIGaN/GaN high electron mobility transistor (HEMT) has been attracted great attention due to its wide bandgap energy of 3.4 eV, high breakdown electric field of 3 MV/em, superior thermal properties, and high electron mobility, very little was repored for the effect of insulator dielectric passivation layer on the breakdown voltage (Vtr) of AIGaN/GaN HEMT. In this paper, we discuss the effect of SiO2;, SiN, Al2O3, HfO2 as an insulator dielectric passivation layer on Vbr AlGaN/GaN FP-HEMIT. The investigation of HEMT was carried out using Technology Computer Aided Design (TCAD). The HEMT with a field plate (FP-HEMT) has a higher Vbr than that of HEMT without a field plate (N-HEMT). The FP-HEMT with HfO2 passivation layer exhibits the highest breakdown vollage of 880 V, The FP-HEMT with SiO2 passivation layer has the lowest breakdown voltage of 175 V. The use of a passivation layer with higher
ABSTRACT
Although AIGaN/GaN high electron mobility transistor (HEMT) has been attracted great attention due to its wide bandgap energy of 3.4 eV, high breakdown electric field of 3 MV/em, superior thermal properties, and high electron mobility, very little was repored for the effect of insulator dielectric passivation layer on the breakdown voltage (Vtr) of AIGaN/GaN HEMT. In this paper, we discuss the effect of SiO2;, SiN, Al2O3, HfO2 as an insulator dielectric passivation layer on Vbr AlGaN/GaN FP-HEMIT. The investigation of HEMT was carried out using Technology Computer Aided Design (TCAD). The HEMT with a field plate (FP-HEMT) has a higher Vbr than that of HEMT without a field plate (N-HEMT). The FP-HEMT with HfO2 passivation layer exhibits the highest breakdown vollage of 880 V, The FP-HEMT with SiO2 passivation layer has the lowest breakdown voltage of 175 V. The use of a passivation layer with higher
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