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Số người truy cập: 107,039,106

 Electron–interface phonon scattering in quantum wells due to absorbtion
and emission of interface phonons
Tác giả hoặc Nhóm tác giả: Ho Kim Dan, Le Dinh, Hoang Dinh Trien, Tran Cong Phong, Nguyen Dinh Hien
Nơi đăng: Physica E: Low-dimensional Systems and Nanostructures; Số: 120;Từ->đến trang: 1-10;Năm: 2020
Lĩnh vực: Tự nhiên; Loại: Bài báo khoa học; Thể loại: Quốc tế
TÓM TẮT
In this article, using the operator projection technique, we will theoretically study the electron-interface phonon scattering process due to the absorbtion and emission of interface phonons by calculating the expression for the absorption power (AP) in GaAs/AlAs quantum wells (QWs). The full width at half maximum (FWHM) of the magneto-interface phonon resonance peaks was obtained by using the profile method. The FWHM is given as functions of the temperature, well width, and magnetic field presented to compare for both the barrier material AlAs and well material GaAs in the two cases of emission and absorbtion of interface modes. The result clearly
demonstrates important roles of the interface optical modes when the well width is small enough.
ABSTRACT
In this article, using the operator projection technique, we will theoretically study the electron-interface phonon scattering process due to the absorbtion and emission of interface phonons by calculating the expression for the absorption power (AP) in GaAs/AlAs quantum wells (QWs). The full width at half maximum (FWHM) of the magneto-interface phonon resonance peaks was obtained by using the profile method. The FWHM is given as functions of the temperature, well width, and magnetic field presented to compare for both the barrier material AlAs and well material GaAs in the two cases of emission and absorbtion of interface modes. The result clearly
demonstrates important roles of the interface optical modes when the well width is small enough.
[ 2020\2020m012d01_10_3_36Bai_bao_ISI_2020.pdf ]
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