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 Red luminescence in H-doped beta-Ga2O3
Tác giả hoặc Nhóm tác giả: Thanh Tung Huynh, Ekaterine Chikoidze, Curtis P Irvine, Muhammad Zakria, Yves Dumont, Ferechteh H Teherani, Eric V Sandana, Philippe Bove, David J Rogers, Matthew R Phillips, Cuong Ton-That
Nơi đăng: Physical Review Materials; Số: 8;Từ->đến trang: 085201;Năm: 2020
Lĩnh vực: Kỹ thuật; Loại: Bài báo khoa học; Thể loại: Quốc tế
TÓM TẮT
The effects of hydrogen incorporation into β− G a 2 O 3 thin films have been investigated by chemical, electrical, and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma doping without any structural alterations of the film; however, x-ray photoemission reveals major changes in the oxygen chemical environment. Depth-resolved cathodoluminescence (CL) reveals that the near-surface region of the H-doped G a 2 O 3 film exhibits a distinct red luminescence (RL) band at 1.9 eV. The emergence of the H-related RL band is accompanied by an enhancement in the electrical conductivity of the film by an order of magnitude. Temperature-resolved CL points to the formation of abundant H-related donors with a binding energy of 28±4 meV. The RL emission is attributed to shallow donor-deep acceptor pair recombination, where the acceptor is a V Ga-H complex and the shallow
ABSTRACT
The effects of hydrogen incorporation into β− G a 2 O 3 thin films have been investigated by chemical, electrical, and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma doping without any structural alterations of the film; however, x-ray photoemission reveals major changes in the oxygen chemical environment. Depth-resolved cathodoluminescence (CL) reveals that the near-surface region of the H-doped G a 2 O 3 film exhibits a distinct red luminescence (RL) band at 1.9 eV. The emergence of the H-related RL band is accompanied by an enhancement in the electrical conductivity of the film by an order of magnitude. Temperature-resolved CL points to the formation of abundant H-related donors with a binding energy of 28±4 meV. The RL emission is attributed to shallow donor-deep acceptor pair recombination, where the acceptor is a V Ga-H complex and the shallow
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