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[1]Article: Study on luminescent properties of Tb3+ and Sm3+ co-doped CaSiO3 phosphors for white light emitting diodes. Authors: D T Khan , N T Dang , S H Jabarov , T G Naghiyev, R M Rzayev, T Q Nguyen1, H V Tuyen, N T Thanh and L V T Son. Materials Research Express. No: 7. Pages: 016507. Year 2020. (Feb 19 2020 11:26AM)
[2]Article: Magnetic phase transition in La0.8Sr0.2Mn0.9Sb0.1O3 manganite under pressure. Authors: S.E. Kichanov, D.P. Kozlenko, L.H. Khiem, N.X. Nghia, N.T.T. Lieu, M.T. Vu, E.V. Lukin, D.T. Khan, N.Q. Tuan, B.N. Savenko, N.T. Dang. Chemical Physics. No: 528. Pages: 110541. Year 2020. (Feb 19 2020 11:11AM)
[3]Article: Structural, magnetic and electronic properties of Ti-doped BaFeO3-d exhibiting colossal dielectric permittivity
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Authors: N.T. Dang, D.P. Kozlenko, N. Tran, B.W. Lee, T.L. Phan, R.P. Madhogaria, V. Kalappattil, D.S. Yang, S.E. Kichanov, E.V. Lukin, B.N. Savenko, P. Czarnecki, T.A. Tran, V.L. Vo, L.T.P. Thao, D.T. Khan, N.Q. Tuan, S.H. Jabarov, M.H. Phan. Journal of Alloys and Compounds. No: 808. Pages: 151760. Year 2019.
(Feb 19 2020 10:59AM)
[4]Article: Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. Authors: Son Phuong Le, Toshimasa Ui, Tuan Quy Nguyen, Hong-An Shih, and Toshi-kazu Suzuki. Journal of Applied Physics. No: 119. Pages: 204503. Year 2016. (Sep 24 2018 10:46AM)
[5]Presentations: Temperature-dependent characteristics of AlTiO/AlGaN/GaN metal-insulator-semiconductor het-erojunction field-effect transistors. Authors: Tuan Quy Nguyen*, Toshimasa Ui, Masahiro Kudo, Hong-An Shih, Norihiko Hashimoto, and Toshi-kazu Suzuki
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. 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2014), Kanazawa, Japan, July 1–3, (2014). Pages: 234-238. Year 2014. (Jul 9 2014 11:57AM)
[6]Article: Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices. Authors: Son Phuong Le, Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, and Toshi-kazu Suzuki. Journal of Applied Physics. No: 116. Pages: 054510. Year 2014. (Sep 24 2018 10:42AM)
[7]Article: Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric. Authors: Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki. Physica Status Solidi (C). No: 10. Pages: 1401–1404. Year 2013. (Feb 12 2014 10:02PM)
[8]Presentations: AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric. Authors: Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, and Toshi-kazu Suzuki. The 40th International Symposium on Compound Semiconductors, Kobe, Japan. Pages: TuC3-4. Year 2013. (Feb 15 2014 9:44PM)
[9]Presentations: Application of AlTiO thin films to AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. Authors: Tuan Quy Nguyen, Toshimasa Ui, Masahiro Kudo, Yuji Yamamoto, Hong-An Shih, and Toshi-kazu Suzuki
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. 2013 International Conference on Solid State Devices and Materials, Fukuoka, Japan, September 24–27 (2013).
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. Pages: 920-921. Year 2013.
(Feb 15 2014 9:53PM)
[10]Presentations: X-ray photoelectron spectroscopy for BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. Authors: Masahiro Kudo, Tuan Quy Nguyen, Hong-An Shih, and Toshi-kazu Suzuki. 10th Topical Workshop on Heterostructure Microelectronics, Hakodate, Japan, September 2–5 (2013).
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. Pages: 49-50. Year 2013.
(Feb 25 2014 11:00PM)
[11]Presentations: Characterization of gate-control efficiency in AlN/AlGaN/GaN metal-insulator-semiconductor structure by capacitance-frequency-temperature mapping. Authors: Hong-An Shih, Tuan Quy Nguyen, Masahiro Kudo, and Toshi-kazu Suzuki. 2012 International Conference on Solid State Devices and Materials, Kyoto, Japan, September 25-27, (2012). Pages: 905-906. Year 2012. (Jul 9 2014 12:07PM)
  
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