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QUỐC TẾ:
[1]Article: Microwave absorption performance for Cu, Co, and Ti co-doped SrFe12O19 as a function of incident angle. Authors: C.T.A. Xuan, H.N. Toan, P.T.V. Ha, T.A. Ho,T.D. Thanh , N.Q. Tuan, P.T. Tho, N. Tran. Materials Chemistry and Physics. No: In press. Pages: 129174. Year 2024. (Mar 11 2024 7:35AM)
[2]Article: Development of high-efficiency tri-layer microwave absorbing materials based on SrMeFe11O19 hexaferrite. Authors: Tran Dang Thanh , Ngo Tran , Nguyen Thi Viet Chinh, Tran Thi Ha Giang, Do Hung Manh, Nguyen Quy Tuan. Journal of Alloys and Compounds. No: 970. Pages: 172421. Year 2023. (Mar 6 2024 6:55PM)
[3]Article: Excellent microwave absorption performances of cobalt-doped SrFe12O19 hexaferrite with varying incident angles. Authors: Tran Dang Thanh , Ngo Tran, Nguyen Thi Viet Chinh, Nguyen Thi Ngoc Anh, Do Hung Manh, Nguyen Quy Tuan. Journal of Alloys and Compounds. No: 952. Pages: 170060. Year 2023. (Mar 6 2024 7:01PM)
[4]Article: Detailed microwave loss mechanisms for nanocomposites of La-doped BaFe12O19 and polyaniline. Authors: P.T. Tho, N. Tran , N.Q. Tuan, T.A. Ho , C.T.A. Xuan , H.N. Toan, B.W. Lee. Ceramics International (J). No: 49 (14). Pages: 23669-23679. Year 2023. (Mar 6 2024 7:08PM)
[5]Article: Ultra-wide effective absorption bandwidth of Cu, Co, and Ti co-doped SrFe12O19 hexaferrite. Authors: P.T.Tho, T.A.Xuan, N.Tran, N.Q. Tuan, W.H.Jeong, S.W.Kim, D.T.Quang, V.D.Nguyen, T.N.Bach, T.D.Thanh, D.T. Khan, B.W.Lee. Ceramics International (J). No: Volume 48, Issue 19, Part A. Pages: 27409-27419. Year 2022. (Mar 8 2023 6:21AM)
[6]Article: Thickness independent microwave absorption performance of La-doped BaFe12O19 and polyaniline composites. Authors: N. Tran, M.Y. Lee, W.H. Jeong, T.L. Phan, N.Q. Tuan, B.W. Lee. Journal of Magnetism and Magnetic Materials. No: 538. Pages: 168299. Year 2021. (Mar 8 2023 6:25AM)
[7]Article: Characteristics of microplastics in shoreline sediments from a tropical and urbanized beach (Da Nang, Vietnam). Authors: Quynh Anh Tran Nguyena, Hoai Nhu Y Nguyen, Emilie Strady, Quy Tuan Nguyen, Mau Trinh-Dang, Van Minh Vo. Marine Pollution Bulletin. No: 161 part B. Pages: 111768. Year 2020. (Mar 8 2023 6:30AM)
[8]Article: Magnetic phase transition in La0.8Sr0.2Mn0.9Sb0.1O3 manganite under pressure. Authors: S.E. Kichanov, D.P. Kozlenko, L.H. Khiem, N.X. Nghia, N.T.T. Lieu, M.T. Vu, E.V. Lukin, D.T. Khan, N.Q. Tuan, B.N. Savenko, N.T. Dang. Chemical Physics (J). No: 528. Pages: 110541. Year 2020. (Feb 19 2020 11:11AM)
[9]Article: Study on luminescent properties of Tb3+ and Sm3+ co-doped CaSiO3 phosphors for white light emitting diodes. Authors: D T Khan , N T Dang , S H Jabarov , T G Naghiyev, R M Rzayev, T Q Nguyen1, H V Tuyen, N T Thanh and L V T Son. Materials Research Express. No: 7. Pages: 016507. Year 2020. (Feb 19 2020 11:26AM)
[10]Article: Structural, magnetic and electronic properties of Ti-doped BaFeO3-d exhibiting colossal dielectric permittivity
. Authors: N.T. Dang, D.P. Kozlenko, N. Tran, B.W. Lee, T.L. Phan, R.P. Madhogaria, V. Kalappattil, D.S. Yang, S.E. Kichanov, E.V. Lukin, B.N. Savenko, P. Czarnecki, T.A. Tran, V.L. Vo, L.T.P. Thao, D.T. Khan, N.Q. Tuan, S.H. Jabarov, M.H. Phan. Journal of Alloys and Compounds. No: 808. Pages: 151760. Year 2019. (Feb 19 2020 10:59AM)
[11]Article: Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. Authors: Son Phuong Le, Toshimasa Ui, Tuan Quy Nguyen, Hong-An Shih, and Toshi-kazu Suzuki. Journal of Applied Physics. No: 119. Pages: 204503. Year 2016. (Sep 24 2018 10:46AM)
[12]Presentations: Temperature-dependent characteristics of AlTiO/AlGaN/GaN metal-insulator-semiconductor het-erojunction field-effect transistors. Authors: Tuan Quy Nguyen*, Toshimasa Ui, Masahiro Kudo, Hong-An Shih, Norihiko Hashimoto, and Toshi-kazu Suzuki
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. 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2014), Kanazawa, Japan, July 1–3, (2014). Pages: 234-238. Year 2014. (Jul 9 2014 11:57AM)
[13]Article: Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices: a comparison with Schottky devices. Authors: Son Phuong Le, Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, and Toshi-kazu Suzuki. Journal of Applied Physics. No: 116. Pages: 054510. Year 2014. (Sep 24 2018 10:42AM)
[14]Article: Fabrication and characterization of BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric. Authors: Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki. Physica Status Solidi (C). No: 10. Pages: 1401–1404. Year 2013. (Feb 12 2014 10:02PM)
[15]Presentations: AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors with sputtering-deposited BN gate dielectric. Authors: Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, and Toshi-kazu Suzuki. The 40th International Symposium on Compound Semiconductors, Kobe, Japan. Pages: TuC3-4. Year 2013. (Feb 15 2014 9:44PM)
[16]Presentations: Application of AlTiO thin films to AlTiO/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. Authors: Tuan Quy Nguyen, Toshimasa Ui, Masahiro Kudo, Yuji Yamamoto, Hong-An Shih, and Toshi-kazu Suzuki
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. 2013 International Conference on Solid State Devices and Materials, Fukuoka, Japan, September 24–27 (2013).
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. Pages: 920-921. Year 2013. (Feb 15 2014 9:53PM)
[17]Presentations: X-ray photoelectron spectroscopy for BN/AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. Authors: Masahiro Kudo, Tuan Quy Nguyen, Hong-An Shih, and Toshi-kazu Suzuki. 10th Topical Workshop on Heterostructure Microelectronics, Hakodate, Japan, September 2–5 (2013).
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. Pages: 49-50. Year 2013. (Feb 25 2014 11:00PM)
[18]Presentations: Characterization of gate-control efficiency in AlN/AlGaN/GaN metal-insulator-semiconductor structure by capacitance-frequency-temperature mapping. Authors: Hong-An Shih, Tuan Quy Nguyen, Masahiro Kudo, and Toshi-kazu Suzuki. 2012 International Conference on Solid State Devices and Materials, Kyoto, Japan, September 25-27, (2012). Pages: 905-906. Year 2012. (Jul 9 2014 12:07PM)
  
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