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 Tridimensional few-layer graphene-like structures from sugar-salt mixtures as high-performance supercapacitor electrodes
Tác giả hoặc Nhóm tác giả: Housseinou Ba, Wei Wang, Giulia Tuci, Sergey N. Pronkin, Caroline Weinberg, Lam Nguyen-Dinh, Giuliano Giambastiani, Cuong Pham-Huu
Nơi đăng: Materials Today Energy; Số: 10;Từ->đến trang: 118-125;Năm: 2018
Lĩnh vực: Khoa học công nghệ; Loại: Bài báo khoa học; Thể loại: Quốc tế
TÓM TẮT
This work describes a straightforward approach to the production of highly-performing and costeffective C-based materials for energy storage application while proposing an original and effective method to the control of the final material morphology. Indeed, robust few-layer graphene-like and highly open-cell structures have been prepared by a modified chemical activation procedure starting from costless sugar/salt mixtures. The as-prepared C-samples ensure high ion-accessible surface area and low ion transport resistance, two key features for the fabrication of effective electrochemical double layer supercapacitors. A selected sample from this series exhibits high specific capacitance (Cg) (312 and 234 F g1 at 0.5 and 50 A g1, respectively, in 0.5 M H2SO4), particularly at high current density values, along with excellent cycling stability and Cg retention for increasing charge-discharge rates
ABSTRACT
This work describes a straightforward approach to the production of highly-performing and costeffective C-based materials for energy storage application while proposing an original and effective method to the control of the final material morphology. Indeed, robust few-layer graphene-like and highly open-cell structures have been prepared by a modified chemical activation procedure starting from costless sugar/salt mixtures. The as-prepared C-samples ensure high ion-accessible surface area and low ion transport resistance, two key features for the fabrication of effective electrochemical double layer supercapacitors. A selected sample from this series exhibits high specific capacitance (Cg) (312 and 234 F g1 at 0.5 and 50 A g1, respectively, in 0.5 M H2SO4), particularly at high current density values, along with excellent cycling stability and Cg retention for increasing charge-discharge rates
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